MD-TX-115-36-F Thyristor-Diode Modüles
| VDRM/ VRRM [V]: | 3000-3600 |
| IFAV/ITAV (Tс,°C) [A]: | 115(85) |
| VFM/VTM (Tc=25°С) [V]: | 2.45 |
| IFM/ITM (Tc=25°С) [A]: | 500 |
| VT(TO)/Tjmax [V]: | 0.95 |
| rT/Tjmax [mΩ]: | 3.000 |
| tq [μs]: | 200 |
| Tjmax [°С]: | 125 |
| Rthjc [°С/W]: | 0.1900 |
| Package: | M.F1 |
| Baseplate width/length [mm]: | 34/94 |
| Design: | dual component |
| Type: | thyristor-diode |
| Datasheet: |  |
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Description
Pressure contact design, high resistance to electric and thermal cycling, various circuit schemes available. Tjmax=125 °C.
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Applications
The modules are designed for energy converters and other DC and AC sysems of various power electrical installations. The required pressure of the semiconductor element is provided structurally, greatly simplifying mounting of the modules. It is possible to use several modules on a single heatsink, significantly reducing overall dimensions of the assembly.
Main applications:
- Rectifier bridges
- AC regulators
- DC motor controls
- Power sources
- Electric drives